Response of alpha particles in hexagonal boron nitride neutron detectors

Realization of highly efficient hexagonal boron nitride neutron detectors

We report the achievement of highly efficient B enriched hexagonal boron nitride (h-BN) direct conversion neutron detectors. These detectors were realized from freestanding 4-in. diameter h-BN wafers 43 lm in thickness obtained from epitaxy growth and subsequent mechanical separation from sapphire substrates. Both sides of the film were subjected to ohmic contact deposition to form a simple ver...

Metal-semiconductor-metal neutron detectors based on hexagonal boron nitride epitaxial layers

Hexagonal boron nitride (hBN) possesses extraordinary potential for solid-state neutron detector applications. This stems from the fact that the boron-10 (B) isotope has a capture cross-section of 3840 barns for thermal neutrons that is orders of magnitude larger than other isotopes. Epitaxial layers of hBN have been synthesized by metal organic chemical vapor deposition (MOCVD). Experimental m...

Hexagonal boron nitride epitaxial layers as neutron detector materials

Micro-strip metal–semiconductor–metal detectors for thermal neutron sensing were fabricated from hexagonal boron nitride (hBN) epilayers synthesized by metal organic chemical vapor deposition. Experimental measurements indicated that the thermal neutron absorption coefficient and length of natural hBN epilayers are about 0.00361 mm 1 and 277 mm, respectively. A continuous irradiation with a the...

Hexagonal boron-nitride nanomesh magnets

Defect-related photoluminescence of hexagonal boron nitride

Photoluminescence of polycrystalline hexagonal boron nitride (hBN) was measured by means of time-and energy-resolved spectroscopy methods. The observed bands are related to DAP transitions, impurities and structural defects. The excitation of samples by high-energy photons above 5.4 eV enables a phenomenon of photostimulated luminescence (PSL), which is due to distantly trapped CB electrons and...